Course - Semiconductor Devices - TFE4146
TFE4146 - Semiconductor Devices
About
Examination arrangement
Examination arrangement: School exam
Grade: Letter grades
| Evaluation | Weighting | Duration | Grade deviation | Examination aids |
|---|---|---|---|---|
| School exam | 100/100 | 4 hours | C |
Course content
This course offers a detailed introduction to the principal categories of semiconductor devices in modern microelectronics. The following topics will be discussed; charge carrier statistics and transport, luminescence, photoconductivity, p-n junctions, metal- semiconductor junctions, diodes, field-effect transistors (MOSFET), bipolar junction transistors (BJT), and selected photonic semiconductor devices.
Learning outcome
Targeted expertise
The candidate has:
- basic insight in the physics and operation principles of the most important semiconductor devices encountered in modern microelectronics.
- basic understanding of electronic structure, charge carrier statistics, and carrier (elctron and hole)transport in semiconductors.
- basic insight in the fabrication technology of semiconductor devices and integrated circuits.
- basic understanding of the charge transport in p-n junctions and metal-semiconductor contacts - basic understanding of the working principles of field effect (MOSFET) and bipolar junction (BJT) transistors.
Technical skills
The candidate will:
- know how to calculate voltages and currents in existing electronic semiconductor devices under different biasing conditions
- know how to draw up and analyze circuit models for field effect and bipolar junction transistors
- know the fabrication technology and be able figure out the principles of operation of new and future semiconductor-based electronic and photonic devices.
General expertise
The candidate has:
- the required skills in mathematics, physics, and electronic circuits for quantitative analysis of defined electronic system components.
- the required knowledge for more advanced studies in design of electronic circuits and systems.
Learning methods and activities
Auditorium lectures and exercises (problems).
At least 8 exercises must be approved before the exam. 10-11 exercises will be given.
Compulsory assignments
- Exercises
Further on evaluation
The written exam will be given in English, only. If there is a re-sit examination, this will normally be held in August and the examination form may be changed from written to oral.
Recommended previous knowledge
Basic understanding of semiconductor physics corresponding to courses TFE4172 or TFY4220.
Course materials
Ben G. Streetman and Sanjay K. Banerjee, "Solid State Electronic Devices", 7th ed. (or later) (Pearson Global Edition) Pearson Education Limited, 2016
Credit reductions
| Course code | Reduction | From | To |
|---|---|---|---|
| TFE4145 | 7.5 | AUTUMN 2018 | |
| TFE4177 | 7.5 | AUTUMN 2018 |
No
Version: 1
Credits:
7.5 SP
Study level: Third-year courses, level III
Term no.: 1
Teaching semester: AUTUMN 2024
Language of instruction: English
Location: Trondheim
- Electronics
- Materials Technology and Electrochemistry
- Materials Science and Solid State Physics
- Solid State Physics
- Physical Electronics
- Technological subjects
Department with academic responsibility
Department of Electronic Systems
Examination
Examination arrangement: School exam
- Term Status code Evaluation Weighting Examination aids Date Time Examination system Room *
- Autumn ORD School exam 100/100 C 2024-11-26 09:00 INSPERA
-
Room Building Number of candidates SL515 Sluppenvegen 14 1 SL120 Sluppenvegen 14 1 SL274 Sluppenvegen 14 3 SL310 turkis sone Sluppenvegen 14 59 SL310 hvit sone Sluppenvegen 14 5 - Summer UTS School exam 100/100 C INSPERA
-
Room Building Number of candidates
- * The location (room) for a written examination is published 3 days before examination date. If more than one room is listed, you will find your room at Studentweb.
For more information regarding registration for examination and examination procedures, see "Innsida - Exams"