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TFE4146

Semiconductor Devices

Choose study year
Credits 7.5
Level Third-year courses, level III
Course start Autumn 2024
Duration 1 semester
Language of instruction English
Location Trondheim
Examination arrangement School exam

About

About the course

Course content

This course offers a detailed introduction to the principal categories of semiconductor devices in modern microelectronics. The following topics will be discussed; charge carrier statistics and transport, luminescence, photoconductivity, p-n junctions, metal- semiconductor junctions, diodes, field-effect transistors (MOSFET), bipolar junction transistors (BJT), and selected photonic semiconductor devices.

Learning outcome

Targeted expertise

The candidate has:

  • basic insight in the physics and operation principles of the most important semiconductor devices encountered in modern microelectronics.
  • basic understanding of electronic structure, charge carrier statistics, and carrier (elctron and hole)transport in semiconductors.
  • basic insight in the fabrication technology of semiconductor devices and integrated circuits.
  • basic understanding of the charge transport in p-n junctions and metal-semiconductor contacts - basic understanding of the working principles of field effect (MOSFET) and bipolar junction (BJT) transistors.

Technical skills

The candidate will:

  • know how to calculate voltages and currents in existing electronic semiconductor devices under different biasing conditions
  • know how to draw up and analyze circuit models for field effect and bipolar junction transistors
  • know the fabrication technology and be able figure out the principles of operation of new and future semiconductor-based electronic and photonic devices.

General expertise

The candidate has:

  • the required skills in mathematics, physics, and electronic circuits for quantitative analysis of defined electronic system components.
  • the required knowledge for more advanced studies in design of electronic circuits and systems.

Learning methods and activities

Auditorium lectures and exercises (problems).

At least 8 exercises must be approved before the exam. 10-11 exercises will be given.

Compulsory assignments

  • Exercises

Further on evaluation

The written exam will be given in English, only. If there is a re-sit examination, this will normally be held in August and the examination form may be changed from written to oral.

Course materials

Ben G. Streetman and Sanjay K. Banerjee, "Solid State Electronic Devices", 7th ed. (or later) (Pearson Global Edition) Pearson Education Limited, 2016

Credit reductions

Course code Reduction From
TFE4145 7.5 sp Autumn 2018
TFE4177 7.5 sp Autumn 2018
This course has academic overlap with the courses in the table above. If you take overlapping courses, you will receive a credit reduction in the course where you have the lowest grade. If the grades are the same, the reduction will be applied to the course completed most recently.

Subject areas

  • Electronics
  • Materials Technology and Electrochemistry
  • Materials Science and Solid State Physics
  • Solid State Physics
  • Physical Electronics
  • Technological subjects

Contact information

Course coordinator

Lecturers

Department with academic responsibility

Department of Electronic Systems