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FE8124

Modeling of Semiconductor Devices

Choose study year

Lessons are not given in the academic year 2011/2012

Credits 7.5
Level Doctoral degree level
Language of instruction English

About

About the course

Course content

This course covers large signal and small signal modeling of important semiconductor devices. Emphasis is placed on Si MOSFETs and on heterostructure devices such as HEMT and HBT. Issues of interest are physical description, equivalent circuit representation, high-frequency behavior, model requirements for RF applications, intrinsic and extrinsic model elements, paramter extraction, and noise modeling.

Learning outcome

Knowledge: The course gives insight into device modeling for use in circuit and device design, with emphasis on RF applications.
Skills: Development and application of device models for use in advanced circuit design.
General competence: Understanding of the physical basis on which the device models are based, and insight into the model limitations.

Learning methods and activities

Lectures. Exercises. Oral exam.

Required previous knowledge

None

Course materials

T. Ytterdal, Y. Cheng and T. A. Fjeldly, “Device Modeling for Analog and RF CMOS Design, Wiley2003, ISBN 0-471-49869-6.
F. Ali and A. Gupta, “HEMTs and HBTs: Devices, Fabrication , and Circuits”, Artech House, 1991, ISBN 0-89006-401-6.
Journal articles

Subject areas

  • Electronics
  • Physical Electronics
  • Technological subjects

Contact information

Department with academic responsibility

Department of Electronic Systems