Course content

Sources of atomic and molecular beams, high-vacuum growth and processing systems, characterization techniques, MBE growth processes of lattice-matched structures, growth processes in strained-layer MBE, material-related growth characteristics in MBE.

Learning outcome

A. Knowledge: This course shall provide the theoretical basis for using Molecular Beam Epitaxy to produce advanced layered thin films of compound semiconductors for electronic and optoelectronic devices, as well as the theoretical basis for important characterization techniques for synthesized structures. B. Skills: To be able to design and produce advanced layered thin films of compound semiconductors using Molecular Beam Epitaxy.

Learning methods and activities

Lectures, student seminars, exercises, laboratory exercises, laboratory demonstrations, self study.

Compulsory assignments

• Laboratory work
• Student seminar

Recommended previous knowledge

TFE4145 Semiconductor Physics and Electronic Devices, Introduction, and TFE4180 Semiconductor Manufactoring Technology, or equivalent knowledge, will give an advantage.

Required previous knowledge

General knowledge of physics and mathematics at university level.

Course materials

M.A. Herman and H. Sitter: "Molecular Beam Epitaxy; Fundamentals and Current Status", Springer-Verlag, Berlin, 1996 (2nd edition). ISBN 3-540-60594-0.
Selected journal publications.